Observation of the Spin Hall Effect in Semiconductors
2004 · paper · Physics
Uses Kerr rotation microscopy to detect electrically induced electron-spin polarization at opposite edges of semiconductor channels. Measurements on GaAs and strained InGaAs are consistent with the spin Hall effect, and the strained samples point to the extrinsic mechanism.
Checked: PDF from poggiolab.unibas.ch, fetched 4 Oct 2026. Page numbers are those of that PDF.
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None that passed a second check.
1 minor (typos and the like; most checked by the judge only)
Typo The symbol ħ in "ωL = gμB Bext/ħ" is defined as "ħ is the Planck constant"; ħ is the reduced Planck constant (h/2π).
- p. 3 Detecting spin currents, definition of Larmor frequency (column 1 bottom)
is the Planck constant
Judge's note: The crop shows the barred symbol ħ in the Larmor formula and the words "ħ is the Planck constant". The formula is right with ħ, and the page 5 value 4π²ħ/(e²kF) = 1.69 kilohm·µm reproduces only with ħ (calculation below uses ħ/e² ≈ 4109 Ω and kF ≈ 9.61e7 m^-1 for n = 3e16 cm^-3, giving ≈ 1.69e-3 Ω·m). So only the verbal name is loose; this is common usage and no result is affected.
Second check: none (judge only)