Single-Layer MoS2 Transistors
2011 · paper · Materials
Supplementary methods for transistors made from single-layer molybdenum disulfide: peeling flakes, making contacts, annealing, and depositing a hafnium oxide layer. Depositing the HfO2 layer raised the measured mobility, in one device from 0.2 to 217 cm²/Vs.
Checked: PDF from media.springernature.com, fetched 4 Oct 2026. Page numbers are those of that PDF.
0 findings
None that passed a second check.
16 minor (typos and the like; most checked by the judge only)
Typo Page 1 reads "Single layers of MoS2 are located with respect to fiduciary markers"; the usual term for alignment marks is "fiducial markers".
- p. 1 Device fabrication, first paragraph
respect to fiduciary markers
Judge's note: Read on the page 1 image: the text is printed as quoted. "Fiduciary marker" is sometimes used loosely for "fiducial marker", so this is a word-choice point and the meaning is clear.
Second check: none (judge only)
Report a problem with this finding
Typo Unit spacing and the degree sign are inconsistent: "270nm of SiO2", "1cm2", "50-100nm thick", "30nm" beside "10/50 nm", "5 min", "200 °C"; page 3 has "200ºC" and "95°C".
- p. 1 Device fabrication
270nm of SiO2
- p. 2 Contact annealing
200 °C
Judge's note: Checked on the images of pages 1 to 3. Both spaced and unspaced forms are printed, and page 3 uses a different degree glyph in "200ºC" from the one in "95°C" two lines below. Purely cosmetic.
Second check: none (judge only)
Report a problem with this finding
Typo Page 2 reads "Typical mobility extracted from two-contact measurements for single layers are in the 0.1-10 cm2/Vs.": the noun "range" is missing after the values, and singular "mobility" takes plural "are".
- p. 2 Paragraph below Fig. S1
for single layers are in the
- p. 2 Contact annealing
Typical mobility extracted from two-contact measurements for single layers are in the 0.1-10 cm2/Vs
Judge's note: Read on the page 2 image, below Fig. S1: the sentence is printed as quoted and ends directly after the unit. The meaning is clear.
Second check: none (judge only)
Report a problem with this finding
Typo Figure S1 caption reads "We can extract a mobility of 0.2 cm2/Vs b Ids - Vbg curve for the same device": there is no full stop before the panel letter b, and panel a is written "Ids – Vbg" with a spaced en dash while panel b uses a hyphen.
- p. 2 Figure S1 caption
Ids – Vbg curve for the device presented in the main manuscript, after annealing and before ALD deposition. We can extract a mobility of 0.2 cm2/Vs b Ids
Judge's note: Checked on the page 2 image. The full stop is missing and the two dashes differ. The reviewer's title mentions a duplicated "a", which is not on the page; only the punctuation points hold.
Second check: none (judge only)
Report a problem with this finding
Typo Page 2 reads "(Au, 50-100nm thick or Ti/Au, 10/50 nm thickness ) and lift-off in acetone", with a stray space before the closing parenthesis.
- p. 2 first paragraph
10/50 nm thickness )
Judge's note: The space before ")" is visible on the page 2 image, in a justified line. The reviewer's remark about the capitalisation of "Au contacts" has no basis: Au is the chemical symbol.
Second check: none (judge only)
Report a problem with this finding
Typo Page 3 reads "the capacitive coupling between the back-gate the the MoS2 channel is not likely to significantly change"; it should read "between the back-gate and the MoS2 channel".
- p. 3 Last paragraph, below Fig. S2
the capacitive coupling between the back-gate the
Judge's note: Seen on the page 3 image: "the" ends one line and "the" begins the next, with no "and". It is in the printed page, not an extraction artefact.
Second check: none (judge only)
Report a problem with this finding
Typo Page 3 reads "This results in a growth rate of 1.9Å/cycles"; a rate per cycle is written "Å/cycle".
- p. 3 ALD growth of HfO2
1.9Å/cycles
Judge's note: Read on the page 3 image: printed as quoted, with the plural and no space before the unit. Cosmetic.
Second check: none (judge only)
Report a problem with this finding
Typo Page 3 reads "AFM images of the device presented in the manuscript before and after ALD growth is shown on Fig. S2.": plural subject "AFM images" with singular verb "is".
- p. 3 ALD growth of HfO2, last sentence before Fig. S2
before and after ALD growth is shown on Fig. S2
- p. 3 ALD growth of HfO2, last sentence before Figure S2
before and after ALD growth is shown on Fig. S2.
Judge's note: Read on the page 3 image, the last sentence before Fig. S2. Printed as quoted.
Second check: none (judge only)
Report a problem with this finding
Typo Figure S2 caption reads "before (left) and after ALD growth of 30nm of HfO2": only the left panel is identified, there is no "(right)", and the panel letters a and b printed on the figure are not used.
- p. 3 Figure S2 caption
before (left) and after ALD
- p. 3 Figure S2 caption
before (left) and after ALD growth of 30nm of HfO2
Judge's note: Checked on the page 3 image. The panels are lettered a and b, and the caption uses "(left)" only, unlike the captions of Figs S1 and S4. The meaning is recoverable.
Second check: none (judge only)
Report a problem with this finding
Typo Page 3 reads "Each cycle included 1Hf precursor pulse and 2 H2O vapor pulses": the space is missing in "1Hf", while "2 H2O" in the same phrase has one.
- p. 3 ALD growth of HfO2
1Hf precursor pulse and 2 H2O vapor pulses
Judge's note: The page 3 image shows "1Hf" with no space, so it is not an extraction artefact. The reviewer's points about word order and tense are style and are not upheld.
Second check: none (judge only)
Report a problem with this finding
Typo Page 4 reads "for the top gate sweep shown on Fig 3. in the manuscript are shown here on Fig. S3" and "shown here on Fig S4.": the full stop is misplaced in "Fig 3." and the abbreviation varies between "Fig" and "Fig.".
- p. 4 Local gates, first paragraph
for the top gate sweep shown on Fig 3.
- p. 4 Local gates
shown on Fig 3. in the manuscript
- p. 4 Local gates
shown here on Fig S4.
- p. 4 Local gates paragraph
the top gate sweep shown on Fig 3.
Judge's note: Punctuation confirmed on the page 4 image: "Fig 3." sits mid-sentence, "Fig S4" has no stop, and "Fig. S3" and "Fig. S1a" do. The separate claim that the pointer should be to Fig. 4 of the main article rests on outside knowledge: the main article is not among the files (this PDF is the supplementary information), so which main-text figure shows the top-gate sweep cannot be checked here. The main article would settle it. Only the punctuation is confirmed.
Second check: none (judge only)
Report a problem with this finding
Typo The y-axis label of Fig. S3b reads "Bottom Gate Leakavge Ibg (10-12 A)"; "Leakavge" should be "Leakage", as in panel a ("Top Gate Leakage").
- p. 4 Fig. S3b, y-axis label
Bottom Gate Leakavge
- p. 4 Figure S3b y-axis label
Bottom Gate Leakavge Ibg
- p. 4 Figure S3b y-axis label
Bottom Gate Leakavge Ibg (10-12A)
- p. 4
Bottom Gate Leakavge Ibg (10
Judge's note: Seen on the page 4 image: the misspelling is in the figure itself, and panel a spells the word correctly.
Second check: none (judge only)
Report a problem with this finding
Typo The compound is printed with a spaced dash split across the line break: "local gates are fabricated using another electron – beam lithography step"; it should read "electron-beam", as on page 1 ("electron-beam lithography system").
- p. 4 Local gates
another electron –
Judge's note: Checked the page 4 image: the line ends "another electron –" with a space before the dash, and the next line begins "beam lithography". Page 1 text prints "electron-beam" and "e-beam" without the space. Cosmetic.
Second check: none (judge only)
Report a problem with this finding
Typo In the last row of the device table the date is printed "July 30,2010" with no space after the comma; every other row prints "July 30, 2010" or "July 28, 2010".
- p. 5 table, last row
190710
- p. 5 Device table, last row
July 30,2010
Judge's note: Checked the page 5 image: the missing space in the last row is visible. The other part of the finding is not a defect: the label "190710" is a different naming form (it reads as a date code), device labels are the authors' own identifiers, and nothing in the document requires a label to match the ALD date. Only the spacing is confirmed.
Second check: none (judge only)
Report a problem with this finding
Typo In the Fig. S4b legend only the first entry carries a unit: "Vtg=-0.4 V", followed by "Vtg=0.4", "Vtg=0.8", "Vtg=1.2", "Vtg=1.6" and "Vbg=0" without "V".
- p. 5 Fig. S4b legend
Vtg=0.4
Judge's note: Checked the page 5 image: the legend is as described. The unit is plainly implied by the first entry, and panel a likewise prints "Vbg=0" without a unit, so this is a cosmetic inconsistency and not a labelling error.
Second check: none (judge only)
Report a problem with this finding
Typo Two reference entries have malformed DOI fields: reference 3 prints "doi:1530-6984 (2007)", which is not a DOI, and reference 4 prints "doi:Doi 10.1021/Cm020357x (2002)" with the label repeated.
- p. 6 Reference 3
doi:1530-6984 (2007)
- p. 6 Reference 4
doi:Doi 10.1021/Cm020357x (2002)
- p. 6 Reference 4
doi:Doi 10.1021/Cm020357x
Judge's note: Checked the page 6 image: both strings are printed as quoted. That "1530-6984" is not a DOI is evident from its form alone, since it lacks the "10." prefix and slash seen in reference 4 and in the page header ("10.1038/nnano.2010.279"). The reviewers' identification of it as the ISSN of Nano Letters rests on outside knowledge and was not verified here; the confirmation does not depend on it. The repeated "doi:Doi" in reference 4 is visible on the page.
Second check: none (judge only)